In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 9S1 ( 2013-09-01), p. 09KB03-
Abstract:
Single-domain BFO thin films are prepared on a SrRuO 3 -buffered SrTiO 3 (STO) (001) substrate by RF planar magnetron sputtering. A domain structure is controlled by vicinal direction of the STO substrate. The BFO thin films on vicinal STO along 〈 110 〉 show single-domain structure without any domain walls. To confirm the influence of epitaxial strain on lattice distortion and ferroelectricity, single-domain BFO thin films with thicknesses ranging from 10–1000 nm are prepared. Synchrotron X-ray diffraction reveals that lattice relaxation and step bunching occur in the thickness range of 50–200 nm. The BFO films with thicknesses over 300 nm are almost free from the influence of the epitaxial strain induced by (001)-oriented substrates. The remanent polarization P r is almost constant at about 60 µC/cm 2 . However, P r slightly increases in the BFO films with thicknesses less than 200 nm. Even the 100-nm-thick BFO film show fully saturated D – E hysteresis at RT, and the P r is 65 µC/cm 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.09KB03
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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