In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 24, No. 1R ( 1985-01-01), p. 14-
Abstract:
Doped a-Si:H films, and nondoped and doped a-Si:N:H films were prepared by the electron-beam deposition of silicon, hydrogenation being achieved by supplying hydrogen ions to the film surface during deposition. The photo- and dark-conductivities showed characteristics similar to those of films prepared by SiH 4 glow discharge and CVD. Boron, in the form B 2 H 6 , and Al were used as p-type dopants, while Sb was used as an n-type dopant.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1985
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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