In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 21, No. S1 ( 1982-01-01), p. 147-
Kurzfassung:
A new processing technology that is effective to prepare self-aligned contact (SAC) holes in silicon gate MOSFET's is demonstrated. In this technology, thermally grown silicon nitride film is utilized as a mask for polysilicon gate oxidation and the oxidation of the polysilicon gate is carried out in two separate process steps. As a result, thick silicon oxide with high breakdown voltage and small coupling capacitance has been reproducibly formed on the polysilicon gate. With this technology, MOSFET's with self-aligned contact holes have been successfully fabricated. This SAC formation method is found to be applicable to MOS VLSI's.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.21S1.147
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1982
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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