In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 3R ( 2010-03-01), p. 032401-
Abstract:
Terbium (Tb) ions were implanted into Al 0.35 Ga 0.65 N epitaxial layers at room temperature to investigate ion-beam-induced damage and luminescence properties at various doses of 1×10 12 –2.8×10 16 Tb/cm 2 . Rutherford backscattering spectrometry/channeling (RBS/channeling) reveals that ion-beam-induced damage level steeply increases and that the damage cannot be fully suppressed even after rapid thermal annealing at 1100 °C, when the dose exceeds 5×10 14 Tb/cm 2 . However, cathodoluminescence (CL) intensity related to Tb 3+ transitions increased initially and saturated above a dose of 1×10 13 Tb/cm 2 . Furthermore, transient decay time determined by time-resolved photoluminescence (TRPL) decreased faster and a fast decay component related to the formation of nonradiative Tb-defect complexes became dominant, as Tb ion dose increases. Therefore, the results suggest that Tb-related luminescence properties are much susceptible to defects and nonradiative defects, namely, Tb-defect complexes, are formed under low-dose conditions even at a very low structural defect density.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.032401
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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