In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 1172-
Abstract:
Photoluminescence (PL) and photoreflectance (PR) measurements have been carried out to investigate the surface state behavior for sulfur-treated GaAs as well as the neutralization effect on the carbon acceptors for hydrogen- or nitrogen-plasma-treated GaAs. Whereas the intensity of the PL signal for the sulfur-treated GaAs increased monotonically as the sulfur-treatment time increased, the intensity of the PR signal increased until the sulfur treatment time of 110 min, and thereafter decreased. These results indicate that a decrease in the number of the surface states and the formation of a quasi-flat band as a result of the sulfur treatment. After the GaAs was hydrogen-plasma-treated and annealed at 400° C, the relative PL intensity ratio between the donor-bound exciton and the carbon acceptor increased by a factor of 2, and a variation in the PR broadening parameter was induced by neutralization of the carbon acceptors due to the combination of the hydrogenic ions and the carbon ions in the GaAs. Variation in the surface states and neutralization of the ions affect the intensity of the PL spectra and the intensity and the broadening parameter of the PR signal.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.1172
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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