In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 4S ( 2013-04-01), p. 04CA07-
Abstract:
We characterized normalized noise power density ( S I / I BL 2 ) and bit-line (BL) current fluctuation (Δ I BL ) using traps generated applying cycling stress in 26 nm NAND flash memory. The Δ I BL , S I / I BL 2 , and capture (τ c ) and emission times (τ e ) of random telegraph noise (RTN) were measured before and after cycling stress, respectively. With cycling stress, traps were generated, and S I / I BL 2 and Δ I BL were increased significantly. The τ c and τ e of RTN after cycling stress are similar with to those before cycling stress. RTN was characterized in terms of the trap position in the three-dimensional space ( x T , y T , and z T ) of the tunneling oxide and trap energy ( E T ). three-dimensional technology computer-aided design (TCAD) simulation was used to determine the position of z T through the effect of adjacent BL cells.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.04CA07
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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