In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 5S2 ( 2010-05-01), p. 05FC02-
Abstract:
To reduce the effective dielectric constant ( k eff ) value for 32 nm node technology and beyond, the effects of a direct chemical mechanical polishing (CMP) process on porous low- k film without a protective cap layer were investigated. It was confirmed that a capless structure on porous low- k film is effective in reducing the resistance–capacitance (RC) products, but it causes degradation of wire-to-wire breakdown voltage characteristics. The most important point of a direct CMP process is to control the amount of damage to the polished surface. In this study, two types of low- k film were compared in combination with a variety of CMP process conditions. As results, we found that a direct CMP process has a positive effect on wire-to-wire current leakage and time-dependent dielectric breakdown (TDDB) reliability where a porous low- k film deposited by modified conditions is used. By optimizing the deposition and curing conditions, it is possible to control the distribution of different pore sizes in porous low- k film, which allows us to realize a highly reliable capless structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.05FC02
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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