In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 4S ( 2011-04-01), p. 04DD14-
Abstract:
The effects of the reactive Ti layer on the resistive switching characteristics of TiN/Ti/TiO 2 /TiN resistive random access memory (ReRAM) are investigated. Nitridation at the top region of Ti during reactive sputtering of the TiN layer and oxygen gettering of Ti from TiO 2 make the TiON/TiO 2- x interface. It results in TiO 2 with a higher concentration of oxygen vacancies during metal alloy annealing, resulting in the low-initial-resistance state. This leads to a stable bipolar switching after the first set process. A larger thickness of Ti decreases resistance value in the high-resistance state, which enables the adjustment of on/off resistance ratio.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.04DD14
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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