In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 3R ( 2012-03-01), p. 031102-
Abstract:
In-situ X-ray photoemission spectroscopy (XPS) has been used to investigate the initial stages of TiO 2 growth on a Si(001) substrate by atomic layer deposition (ALD). The core level spectra of Si 2p, C 1s, O 1s, and Ti 2p were measured at every half reaction in the titanium tetra-isopropoxide (TTIP)–H 2 O ALD process. The ligand exchange reactions were verified using the periodic oscillation of the C 1s concentration, as well as changes in the hydroxyl concentration. XPS analysis revealed that Ti 2 O 3 and Si oxide were formed at the initial stages of TiO 2 growth. A stoichiometric TiO 2 layer was dominantly formed after two cycles and was chemically saturated after four cycles.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.031102
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink