In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 1474-
Abstract:
The SiO 2 film deposition employing inductively coupled plasma (ICP) with SiCl 2 H 2 /O 2 occurred rapidly in the low-density plasma region due to production of precursors of SiCl 2 H 2 O x ( x =1–4). In an ICP CVD apparatus made with optimized distances between the antenna and the stage, and between the SiCl 2 H 2 gas ring and the stage, a SiO 2 film was with high deposition rate of more than 1 µm/min, 1.5 times the BHF etch rate of thermal oxide, and low Cl inclusion at a pressure of around 0.1 Torr. To supply ions to the Si wafer located in the ion-deficient plasma region, another time-modulated ICP antenna was set near the stage. Since deposition rate decreased with increasing wafer temperature, the laser the interference measurement of a Si wafer set on an RF-biased stage revealed the importance of the tight adhesion of the wafer to the stage. Ar + ion bombardment during discharge on and off-time of 5 µs enabled us to fill Si trenches with SiO 2 at a V dc of 500 V.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.1474
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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