In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 4S ( 2010-04-01), p. 04DC24-
Abstract:
We have studied unusual V th shifts in the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) of yttrium-doped HfO 2 gate dielectrics. Both positive and negative stress conditions introduce shifts in opposite directions for yttrium-doped HfO 2 in the low stress region. That is, a negative shift under a positive bias and a positive shift under a negative bias were observed. This is due to yttrium-related defects, with electron detrapping for PBTI and electron trapping for NBTI. Such defect formation can be suppressed by incorporating nitrogen into HfO 2 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.04DC24
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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