In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 1R ( 1996-01-01), p. 140-
Abstract:
Temperature-dependent current-voltage characteristics of fully processed Ba 0.7 Sr 0.3 TiO 3 thin film capacitors integrated in a charge-coupled device delay-line processor as bypass capacitors were studied. The thin film capacitors with a film thickness of 185 nm were formed by metal-organic decomposition processing. The leakage current measured after completion of the integration process was 1 to 2 orders of magnitude higher than that measured after capacitor patterning. The leakage current at low voltages ( 〈 1 V, 50 kV/cm) indicated ohmic conduction within a measured temperature range of 300–423 K. At high voltages ( 〉 10 V, 500 kV/cm), the Schottky mechanism plays a dominant role in leakage current, while the Frenkel-Poole emission begins to contribute to the leakage current as the temperature is elevated.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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