In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 645-648 ( 2010-4), p. 611-614
Abstract:
We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.645-648
DOI:
10.4028/www.scientific.net/MSF.645-648.611
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2010
detail.hit.zdb_id:
2047372-2
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