In:
ECS Transactions, The Electrochemical Society, Vol. 33, No. 4 ( 2010-10-01), p. 125-135
Abstract:
Wafer bonding is an enabling technology for the fabrication of advanced electronic devices based on the integration of high-quality heterogeneous materials. This paper summarizes our work on wafer-level bonding of nitride semiconductors and its application to electronic devices. Our bonding technology uses a thin silicon dioxide (SiO2) or Benzocyclobutene (BCB) interlayer to enhance the bonding, and it has been applied to the fabrication of three different kinds of devices: hybrid chips where Si (100) MOSFETs are integrated with GaN transistors in close proximity; N-face GaN transistors on Ga-face grown material for high frequency applications; and high power GaN power switches with record breakdown characteristics.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2010
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