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  • 1
    Online Resource
    Online Resource
    Presentation1.pdf
    Frontiers Media SA ; 2021
    In:  Frontiers in Pharmacology Vol. 12 ( 2021-9-28)
    Details
    In: Frontiers in Pharmacology, Frontiers Media SA, Vol. 12 ( 2021-9-28)
    Abstract: (−)-Epigallocatechin-3-gallate (EGCG) is the main bioactive catechin in green tea. The antitumor activity of EGCG has been confirmed in various types of cancer, including lung cancer. However, the precise underlying mechanisms are still largely unclear. In the present study, we investigated the metabolite changes in A549 cells induced by EGCG in vitro utilizing liquid chromatography-mass spectrometry (LC-MS)-based metabolomics. The result revealed 33 differentially expressed metabolites between untreated and 80 μM EGCG-treated A549 cells. The altered metabolites were involved in the metabolism of glucose, amino acid, nucleotide, glutathione, and vitamin. Two markedly altered pathways, including glycine, serine and threonine metabolism and alanine, aspartate and glutamate metabolism, were identified by MetaboAnalyst 5.0 metabolic pathway analysis. These results may provide potential clues for the intramolecular mechanisms of EGCG’s effect on A549 cells. Our study may contribute to future molecular mechanistic studies of EGCG and the therapeutic application of EGCG in cancer management.
    Type of Medium: Online Resource
    ISSN: 1663-9812
    URL: Article
    URL: Article
    URL: Article
    DOI: 10.3389/fphar.2021.732716
    DOI: 10.3389/fphar.2021.732716.s001
    DOI: 10.3389/fphar.2021.732716.s002
    Language: Unknown
    Publisher: Frontiers Media SA
    Publication Date: 2021
    detail.hit.zdb_id: 2587355-6
    SSG: 15,3
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  • 2
    Online Resource
    Online Resource
    (Invited) Defects and Development of High Power Vertical GaN Based Structures
    The Electrochemical Society ; 2019
    In:  ECS Meeting Abstracts Vol. MA2019-02, No. 31 ( 2019-09-01), p. 1365-1365
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2019-02, No. 31 ( 2019-09-01), p. 1365-1365
    Abstract: This presentation highlights the use of x-ray scattering and electron microscopy to characterize selectively doped GaN layers for high power vertical diodes. Examples from these techniques will include assessment of residual impurities and crystalline damage in selectively doped regions resulting from dry etching or ion implantation processes and if such defects are removed by subsequent etching and / or annealing steps. X-ray reflectivity (XRR) combined with high angle reciprocal space mapping and dynamical diffraction simulations are effective means by which to assess the strain and defect distribution in the wafers. Advanced synchrotron techniques, through the use of hard x-ray nanoprobes and diffraction imaging, offer further insight into the development of these technologies. Transmission Electron Microscopy measurements, including electron energy loss spectroscopy, energy dispersive x-ray analysis, and selected area diffraction patterns, determine whether impurities were introduced by the selective doping process and whether the damage removal processes were able to remove growth and implantation-induced defects. A better understanding of the roles of defects on device performance is based on these techniques.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2019-02/31/1365
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2019
    detail.hit.zdb_id: 2438749-6
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  • 3
    Online Resource
    Online Resource
    Ion Species Dependence on the Interfacial Properties of Silicon Homojunctions Bonded Using an Ion Bombardment Treatment
    The Electrochemical Society ; 2020
    In:  ECS Meeting Abstracts Vol. MA2020-02, No. 22 ( 2020-11-23), p. 1622-1622
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2020-02, No. 22 ( 2020-11-23), p. 1622-1622
    Abstract: Surfaces of (001) p-type silicon substrates were bombarded with either Ar or Kr ions prior to direct wafer bonding using an EVG © ComBond © high-vacuum wafer-bonding system. 1 Previously, we showed that this ion bombardment treatment induces a thin ~nm amorphous region at the bonded interface. 2 In this study, we extend upon this previous effort towards a fundamental understanding of this amorphous interfacial region by examining the dependence of the bonded interface’s properties with two different ion species. The ion energies used spanned from a factor of 0.5 to 2.5 times of a baseline energy E 0 . X-ray reflectivity measurements were performed on single unbonded wafers that were ion bombarded with either Ar or Kr to determine the thickness of the amorphous region as well as its mass density compared to bulk Si. Wafers treated with Ar showed no surface mass density dependence with ion energy, while wafers treated with Kr did show an ion energy dependence. While the Ar treatment reduces the surface density to ~80% of bulk Si density regardless of the energy used, the Kr treatment reduces the surface density to as low as ~70% of bulk Si density at 2.5⋅E 0 . Furthermore, for a given energy, the Ar treatment resulted in thicker layers than the Kr treatments, which is consistent with SRIM 3 simulations because Kr is a heavier species than Ar. Current-voltage measurements were also used to probe the electrical properties of the bonded interfaces. Band structure modeling of the current-voltage measurements revealed that the amorphous region can be modeled with a step barrier that spans the thickness of the amorphous region. References Flötgen, et al., ECS Trans., 64(5), 103 (2014). E. Liao, et al., ECS Trans., 86(5), 55 (2018). F. Ziegler, et al., The Stopping Range of Ions in Solids vol. 1, (1985). Figure 1
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2020-02221622mtgabs
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
    detail.hit.zdb_id: 2438749-6
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  • 4
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    Online Resource
    (Invited) Novel Implantation Processing and Characterization for Scalable GaN Power Devices
    The Electrochemical Society ; 2017
    In:  ECS Meeting Abstracts Vol. MA2017-02, No. 31 ( 2017-09-01), p. 1347-1347
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2017-02, No. 31 ( 2017-09-01), p. 1347-1347
    Abstract: Novel ion implantation processing has been introduced to enable p-type doping for high performance vertical GaN p-n power devices. Multicycle Rapid Thermal Annealing (MRTA) leads to state-of the-art p-type doping ( 〉 8% dopant ionization); high n-type doping can also be achieved. The implantation process is also compatible with a tapered implanted junction terminal extension approach to achieve effective edge termination necessary to provide breakdown voltages over 90% of the theoretical maximum value at minimal cost and processing complexity. MRTA, with ambient control (N 2 ambient at 200 psi), pulsed annealing up to ~1400 °C, and an appropriate dielectric encapsulant, is utilized to further improve activation efficiency and, ultimately, p-n junction performance through selective ion implantation and processing optimization. Here, the focus is on MRTA activation of Mg + implantation, with comparison to the potential effectiveness of other p-type dopants, to assess the impact of the crystalline nature of the substrate and to optimize the encapsulant mask, in order to promote the highest dopant activation. This fundamental study of the role of defects in material produced by GaN epitaxial deposition is expected to lead to a pathway to high activation efficiency through a mechanistic understanding of the relationship between processing methods and performance. The critical link between defects and implant activation will be discussed through the use of novel structural materials characterization techniques as well as standard electrical and optical techniques. Electron microscopy defect analysis, determining the role of implanted and annealed defects, and providing localized strain measurements helps assess defect evolution as a function of implant and annealing parameters. X-ray based reciprocal space mapping as a function of the implant and subsequent annealing will be shown to correlate strain and defect formation with dopant activation in order to parameterize the MRTA process non-destructively. This information leads to the production of p-n junction devices that are scalable, provide high surge currents, and high ideality factors. Understanding point defect concentrations, dislocation types and concentrations, and residual stress will lead to effective p-type dopant activation and high device performance.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2017-02/31/1347
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2017
    detail.hit.zdb_id: 2438749-6
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  • 5
    Online Resource
    Online Resource
    GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
    Institute of Electrical and Electronics Engineers (IEEE) ; 2019
    In:  IEEE Electron Device Letters Vol. 40, No. 6 ( 2019-6), p. 881-884
    Details
    In: IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers (IEEE), Vol. 40, No. 6 ( 2019-6), p. 881-884
    Type of Medium: Online Resource
    ISSN: 0741-3106 , 1558-0563
    URL: Journal
    URL: Article
    DOI: 10.1109/LED.55
    DOI: 10.1109/LED.2019.2909289
    RVK:
    ZG 1100
    Language: Unknown
    Publisher: Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2019
    detail.hit.zdb_id: 245158-X
    detail.hit.zdb_id: 2034325-5
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  • 6
    Online Resource
    Online Resource
    Ion Species Dependence on the Interfacial Properties of Silicon Homojunctions Bonded Using an Ion Bombardment Treatment
    The Electrochemical Society ; 2020
    In:  ECS Transactions Vol. 98, No. 4 ( 2020-09-08), p. 81-85
    Details
    In: ECS Transactions, The Electrochemical Society, Vol. 98, No. 4 ( 2020-09-08), p. 81-85
    Abstract: Direct wafer bonded p-type (001) silicon homojunction structures were prepared with an ion bombardment surface treatment using either Ar or Kr ions prior to bonding in a high-vacuum direct wafer bonding system. The ion energies used spanned from a factor of 0.5 to 5 times of a baseline energy E 0 for Ar and 0.5 to 2.5 times for Kr. The ion bombardment surface treatment induces a thin ~nm amorphous region at the Si|Si bonded interface. X-ray reflectivity measurements were performed on ion-bombarded single unbonded wafers. It was found that the Ar treated wafers showed a weak surface mass density dependence with ion energy, while wafers treated with Kr showed a strong ion energy dependence. While the Ar treatment reduces the surface density to ~80% of bulk Si density, the Kr treatment reduces the surface density to as low as ~70% of bulk Si density using an ion energy of 2.5⋅E 0 . Current-voltage measurements were also used to probe the electrical resistance across the amorphous interfacial region of the bonded structures prepared with Ar ions.
    Type of Medium: Online Resource
    ISSN: 1938-5862 , 1938-6737
    URL: Article
    DOI: 10.1149/09804.0081ecst
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
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  • 7
    Online Resource
    Online Resource
    Characterization of interfacial morphology of low temperature, low pressure Au–Au thermocompression bonding
    IOP Publishing ; 2018
    In:  Japanese Journal of Applied Physics Vol. 57, No. 2S1 ( 2018-02-01), p. 02BC03-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 57, No. 2S1 ( 2018-02-01), p. 02BC03-
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.7567/JJAP.57.02BC03
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 8
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    Online Resource
    Lithium ameliorates autistic-like behaviors induced by neonatal isolation in rats
    Frontiers Media SA ; 2014
    In:  Frontiers in Behavioral Neuroscience Vol. 8 ( 2014-06-26)
    Details
    In: Frontiers in Behavioral Neuroscience, Frontiers Media SA, Vol. 8 ( 2014-06-26)
    Type of Medium: Online Resource
    ISSN: 1662-5153
    URL: Article
    DOI: 10.3389/fnbeh.2014.00234
    Language: Unknown
    Publisher: Frontiers Media SA
    Publication Date: 2014
    detail.hit.zdb_id: 2452960-6
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  • 9
    Online Resource
    Online Resource
    Table_7.DOCX
    Frontiers Media SA ; 2022
    In:  Frontiers in Neurology Vol. 12 ( 2022-1-12)
    Details
    In: Frontiers in Neurology, Frontiers Media SA, Vol. 12 ( 2022-1-12)
    Abstract: Background: Acute ischemic stroke (AIS) caused by tandem intracranial and extracranial occlusions is not rare. However, optimal strategy between antegrade (extracranial first) or retrograde (intracranial first) approaches still remains elusive. This systematic review and meta-analysis aim to compare the two approaches to provide updated clinical evidence of strategy selection. Methods: PubMed, Ovid, Web of Science, and the Cochrane Library were searched for literature comparing antegrade and retrograde approaches for patients with AIS with concomitant tandem occlusions. Outcomes including successful reperfusion [Throbolysis in Cerebral Infarction (TICI) 2b−3] and 90-day favorable outcome [modified Rankin Scale (mRS) 0–2] , any intracerebral hemorrhage, symptomatic intracerebral hemorrhage, procedural complications, and mortality were evaluated. The risk of bias was assessed using the Newcastle–Ottawa Scale and illustrated in the Funnel plot. Heterogeneity was assessed by I 2 statistic. Subgroup and sensitivity analyses were also performed. Results: A total of 11 studies accounting 1,517 patients were included. 831 (55%) patients were treated with an antegrade approach and 686 (45%) patients were treated with the retrograde approach. A higher successful reperfusion rate was achieved in retrograde group than that of antegrade group [83.8 vs. 78.0%; odds ratio (OR): 0.63, 95% CI: 0.40–0.99, p = 0.04]. 90-day favorable outcome (mRS 0–2 at 90 days) also showed significantly higher in retrograde group compared with antegrade group (47.3 vs. 40.2%; OR: 0.72, 95% CI: 0.58–0.89, p = 0.002). The incidence of any intracranial hemorrhage (ICH), symptomatic intracranial hemorrhage, 90-day mortality, and other complications did not differ between two groups. Conclusion: In AIS with tandem occlusions, the retrograde approach might achieve a higher successful reperfusion rate and better functional outcome with a comparable safety profile when compared with an antegrade approach. Further prospective controlled studies with more meticulous design and a higher level of evidence are needed to confirm these results. Systematic Review Registration: “PROSPERO” database (CRD 42020199093), https://www.crd.york.ac.uk/PROSPERO/ .
    Type of Medium: Online Resource
    ISSN: 1664-2295
    URL: Article
    URL: Article
    URL: Article
    URL: Article
    URL: Article
    URL: Article
    URL: Article
    URL: Article
    DOI: 10.3389/fneur.2021.757665
    DOI: 10.3389/fneur.2021.757665.s001
    DOI: 10.3389/fneur.2021.757665.s002
    DOI: 10.3389/fneur.2021.757665.s003
    DOI: 10.3389/fneur.2021.757665.s004
    DOI: 10.3389/fneur.2021.757665.s005
    DOI: 10.3389/fneur.2021.757665.s006
    DOI: 10.3389/fneur.2021.757665.s007
    Language: Unknown
    Publisher: Frontiers Media SA
    Publication Date: 2022
    detail.hit.zdb_id: 2564214-5
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  • 10
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    Online Resource
    (Invited) Defect and Impurity Characterization in Wide Bandgap Materials and Interfaces: Impact on Thermal Transport
    The Electrochemical Society ; 2020
    In:  ECS Meeting Abstracts Vol. MA2020-02, No. 26 ( 2020-11-23), p. 1809-1809
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2020-02, No. 26 ( 2020-11-23), p. 1809-1809
    Abstract: Wide bandgap materials are suitable for high power and high temperature applications. However, these materials, and metal layers that are part of device structures must effectively transport heat from the active device regions. Structural defects, chemical defects, and interface properties can degrade thermal transport, but relatively little attention has been paid to the precise nature of these defects and how they impact thermal transport. Electron microscopy and x-ray scattering based techniques are employed to provide insight into the defects present in these materials. When these techniques are integrated with thermal transport measurements and theoretical insights gained from molecular dynamics simulations, a much better understanding of thermal transport in wide bandgap materials can be realized. Examples of how defects impact transport for diamond boundary interfaces, AlN layers, and GaN heterostructures will be presented.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2020-02261809mtgabs
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
    detail.hit.zdb_id: 2438749-6
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