In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 2R ( 1992-02-01), p. 343-
Abstract:
A β-SiC layer was prepared by the carbon ion implantation technique into silicon substrates heated up to 450°C with annealing treatment. The carbon ion was implanted at an energy of 30 keV and dose in the range of 1-5×10 17 ions/cm 2 . β-SiC grains, whose size was 100-500 Å, were observed in the implanted layer after annealing at 1200°C, by cross-sectional transmission electron microscopy. The dependence of substrate temperature, carbon ion dose, and annealing temperature on SiC formation was investigated by infrared absorption, electron spin resonance, and Auger electron spectroscopies. `Hot' implantation, which is a method of heating the substrate during carbon ion implantation, was effective for enhancing the formation of Si-C bonds.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink