In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 12A ( 1999-12-01), p. L1428-
Abstract:
The etching and ferroelectric properties of SrBi 2 Ta 2 O 9 (SBT) thin films prepared by metal
organic decomposition (MOD) were investigated. It was observed that the etching rates of SBT thin films varied with the etch parameters. The etching rate of SBT in gases with Ar
added is higher, which indicates that the physical bombardment could be more efficient in SBT etching. We also investigated the influence of etching damage in SBT films during the
reactive ion etching (RIE) process on the electrical properties of ferroelectric materials.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L1428
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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