In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 778-780 ( 2014-2), p. 883-886
Abstract:
Utilizing a high power discrete SiC-JFET developed by KEK, a switching power supply (SPS) that had a circuit topology of H-bridge was designed and constructed to drive the induction acceleration system for the KEK digital accelerator. Following the hopeful result with a resistive dummy load, the SPS was installed in the actual KEK Digital Accelerator system. Consequently, heavy ion beam acceleration was successfully demonstrated. Moreover, we have started to develop a next generation package for a high voltage SiC-JFET, which has the voltage rating of 2.4 kV. Two in one module construction, bonding wire free connection, and bidirectional thermal flowing are included in the design concept of the new package.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.778-780
DOI:
10.4028/www.scientific.net/MSF.778-780.883
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2014
detail.hit.zdb_id:
2047372-2
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