In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 8R ( 1991-08-01), p. 1753-
Kurzfassung:
Systematic measurement of the electrical transport phenomena of black phosphorus grown by the all-closed bismuth-flux method has been performed in the range from room temperature down to 0.5 K for the electrical resistivity and down to 1.5 K for the Hall effect and the magnetoresistance effect. These samples exhibited p-type conduction with two types of acceptors, of which activation energies were 26.1 meV and 11.8 meV, respectively. The effective concentrations of acceptors were typically 1.36×10 15 cm -3 for the deeper level and 0.44×10 15 cm -3 for the shallower level. The maximum of the Hall mobility was found to be 2×10 4 cm 2 /Vs around 20 K. A new observation of n-type conduction below about 7 K for some of these samples suggested the existence of a surface inversion layer as a channel of electron conduction.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.1753
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1991
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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