In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 415-417 ( 2011-12), p. 1327-1332
Abstract:
Al 0.22 Ga 0.78 As/In 0.18 Ga 0.82 As/Al 0.22 Ga 0.78 As double heterojunction high electron mobility transistors (DH-HEMTs) with gate structures of traditional planar gate (PG), one-stage gamma-gate (1SΓG) and two-stage gamma-gate (2SΓG) formed by using the Al 0.22 Ga 0.78 As/In 0.49 Ga 0.51 P etch-stop layers (ESL) are simulated and presented in this work. Based on this proposed ESL structure design, the fabrication and implementation of studied DH-HEMT device with 1SΓG and 2SΓG could be expected. Both ΓG-structure devices show the better electric field property compared to PG-device. Simulated results reveal that there are no significant differences in common-source voltage-current characteristics among all studied devices. The obtained drain current density and transconductance of all studied devices are about 220 mAmm -1 and 265 mSmm -1 . However, the current stability of ΓG-devices with larger bias operation would be improved due to its edge-effect of ΓG extended-region. In addition, the electric field intensity under the gate-footprint is effectively reduced by both studied ΓG structures. The electric field peak value of PG-device is 498 kV cm -1 , and it would be reduced down to about 210 kVcm -1 and 178 kVcm -1 for 1SΓG- and 2SΓG-device, respectively. On the other hand, some frequency property dropping is observed from studied device with 1SΓG or 2SΓG due to the side-edge extension of ΓG-device would create the additional parasitic capacitance. The obtained cut-off frequencies are 15 GHz, 10.5 GHz and 10 GHz for PG-, 1SΓG- and 2SΓG-device (at V GS =+5 V and V GS =-0.75 V), respectively.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.415-417
DOI:
10.4028/www.scientific.net/AMR.415-417.1327
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2011
detail.hit.zdb_id:
2265002-7
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