In:
ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2018-02, No. 31 ( 2018-07-23), p. 1018-1018
Abstract:
Strain engineering for pFETs has been conventionally enabled utilizing embedded SiGe in the source/drain regions to continuously boost the transistor current drive and transconductance [1]. Historically, for planar technologies, transconductance was monotonically improved by advancing the technology generations. However, this trend for transconductance, when properly normalized to the effective device width (fin perimeter) is no longer observed when FinFETs were introduced to the mainstream CMOS to improve the short channel effects for sub 30nm gate lengths [2] . The FinFET transconductance saturation or drop be attributed to ineffectiveness of the embedded SiGe stressors (in spite of higher mobility near-(110) surfaces) and/or increased contribution of the S/D resistance as the contacted gate pitch size aggressively scales down. Unless there is a strong and reliable method to externally apply gigantic strain to the Si fin channel, using strained SiGe (s-SiGe) channel, with built-in uniaxial compression, is a strong option to overcome this issue. In fact, SiGe has been utilized in CMOS industry as a knob to control the threshold voltage (V th ) and in part to boost the pFET reliability and transport [3]. Moreover, introduction of SiGe channel for planar pFET has improved reliability, resulting in further Capacitance-Equivalent-oxide-Thickness (CET) scaling over Si. For s-Si 1-x Ge x FinFETs, choice of Ge content (x) is not trivial. Adding more Ge can ideally build in more channel stress resulting increased hole mobility and current drive. However, epitaxial-defect-driven fin height control due to the critical thickness constraints, process thermal budget, bandgap reduction and gate-induced drain leakage (GIDL) control remain challenging. In particular, High-Ge-Content (HGC) s-SiGe FinFETs are of great interest for two reasons, from the transport point of view: First, very high level of strain (close to 3GPa) can be achieved when lattice matched to Si [4]. Second, if strain-relaxed buffer (SRB) SiGe with moderate Ge % is used to tensily strain Si nFET, higher Ge is required to compressively strain the pFET [5] . The GIDL issue can be mitigated by operating the high-performance (HP) device at a lower VDD, i.e. below 0.6V, in line with logic roadmap [4]. Controlling the H FIN , to be competitive with the state-of-the-art Si FinFETs, remains challenging. Above all, a major challenge is associated with the gate stack and interface trap control which is more pronounced in HGC SiGe than Si and pure Ge. In this talk, key process details to enable relatively tall fins and optimized replacement high-k metal gate (RMG) stacks in high-Ge-content SiGe will be discussed and their impact on key device characteristics will be presented. In particular, we review our recent advancement to achieve optimized RMG IL and passivation [6], high hole mobility and record performing short channel pMOS FinFETs. In additions, a metal gate work-function tuning solution will be presented utilizing an ultra-thin replacement metal-gate scheme to achieve target high-performance off current down to 15nm gate lengths. References: [1] T. Ghani et al., IEDM, 2003, p. 197. [2] P. Hashemi, et al., IEDM, 2017, p. 824. [3] S. Krishnan et al., IEDM, 2011, p. 634. [4] P. Hashemi et al., IEDM, 2014, p. 402. [5] R. Xie et al., IEDM, 2016, p. 47. [6] P. Hashemi et al., VLSI Tech. Symp., 2017, p. 120.
Type of Medium:
Online Resource
ISSN:
2151-2043
DOI:
10.1149/MA2018-02/31/1018
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2018
detail.hit.zdb_id:
2438749-6
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