In:
ECS Transactions, The Electrochemical Society, Vol. 16, No. 10 ( 2008-10-03), p. 917-921
Abstract:
Photoluminescence of strained Si1-x-yGexCy alloy layer and Si1-x-yGexCy /Si1-xGex structures selectively grown by RT-CVD is investigated. Spectroscopic PL at low temperature (14K) and integrated PL at room temperature were performed. We report the effect of C atoms on SiGe photoluminescence spectra features, especially intensity ratio between the no-phonon (NP) and transverse-optical (TO) transitions. Using dedicated Si1-x-yGexCy /Si1-xGex structures, influence on SiGe PL spectra of C atoms supposed in non-substitutional positions is reported.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2008
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