In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 9S ( 1998-09-01), p. 5150-
Abstract:
Pb(Zr, Ti)O 3 (PZT)/MgO/Si(001) stacked structures, one of the potential
components of ferroelectric-gate field effect trnsistors, have been fabricated and characterized. According to the electrical characterization of MgO/Si structures, MgO thin films prepared on Si
substrates at a low growth rate showed a small leakage current of ∼10 -8 A/cm 2 order in an
electric field of 1 MV/cm. In C - V measurements of as-grown MgO/Si interfaces,
injection-type hysteresis was observed because of crystal defects in the MgO film adjacent to the interface. After oxygen annealing at 400°C, however, it showed no hysteresis and a
low interface trap density of the order of 10 11 cm -2 eV -1 was achieved with no formation of a
low-dielectric layer at the MgO/Si interface. These results indicate that MgO thin films are applicable as gate insulators of FETs. After a PZT film was deposited on the MgO/Si
structure, the C - V characteristic of the stacked structure showed a ferroelectric hysteresis
curve and a low interface trap density of 5×10 11 cm -2 eV -1 . A maximum memory window
width of 1.2 V was obtained for the PZT thin film on Si substrate with a MgO intermediate layer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.5150
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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