In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3A ( 1997-03-01), p. L253-
Abstract:
Selective lateral etching for an Al 0.3 Ga 0.7 As/GaAs system was conducted with iodine-potassium iodide ( I 2 /KI) redox solution having high preferential etching characteristics. The selectivity of Al 0.3 Ga 0.7 As relative to GaAs varied with the molar ratio of I 2 /KI, pH, stripe direction, and stirring speed of the solution. The undercut widths of Al 0.3 Ga 0.7 As below the GaAs layer were measured by observing the etched cross-section with a scanning electron microscope. For the [100] directional stripe, the undercut width of Al 0.3 Ga 0.7 As was measured up to about 3 µ m after etching for 1 min under the etching conditions of [I 2 ]/[KI] =0.67 and pH=2.76. As a new application to the Al x Ga 1- x As/GaAs heterojunction bipolar transistor (HBT) with x ≤0.3, selective lateral etching was carried out to reduce the extrinsic base-collector capacitance of the HBT. As the result of capacitance-voltage (C-V) measurement, the base-collector capacitance of the lateral etched HBT was reduced to about 50% of that of the conventional HBT.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L253
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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