In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 5R ( 2001-05-01), p. 3260-
Abstract:
Leakage current characteristics of (Ba,Sr)TiO 3 (BST) thin films deposited by metal-organic chemical vapor deposition (MOCVD) on Ru bottom electrodes were investigated. CVD-BST thin film on an Ru electrode showed much higher leakage current density than that on the Pt electrode. In the case of the CVD-BST thin film deposited on the PVD-BST(30 Å)/Ru or N 2 O-plasma-treated Ru electrode, the leakage current density showed a very small value of about 2×10 -8 A/cm 2 at ±1 V and the dielectric loss was about 0.006. It was found that oxygen atoms adsorbed on the surface of the Ru bottom electrode during the deposition of PVD-BST or N 2 O plasma treatment played a key role in restoring the barrier height at the bottom interface.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.3260
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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