In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 600-603 ( 2008-9), p. 1285-1288
Abstract:
A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was
adopted to produce AlN epitaxial layers. In this study, we report the surface morphology of AlN epitaxial layer grown on various substrates such as 3C-SiC (100), 4H-SiC (0001) with 8o off-axis
(0001) plane tilted toward the 〈 11 2 0 〉 direction and on-axis 4H-SiC (0001). An average growth rate
of AlN layer at 2350oC in 500 Torr of N2 was measured to be about 6μm/hr. While AlN layer grown on the 3C-SiC (100) substrate at 2350oC exhibited polycrystalline structure, AlN epitaxial layer
grown on on-axis and off-axis 4H-SiC (0001) substrates had highly c-axis oriented epitaxial structure. In particular, the stacked structure of hexagonal plates was observed on off-axis substrate and the size
of the hexagonal plates increased with growth time. Hexagonal plates were observed to be coalesced and the step-bunching was finally disappeared.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.600-603
DOI:
10.4028/www.scientific.net/MSF.600-603.1285
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2008
detail.hit.zdb_id:
2047372-2
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