In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 45, No. 10R ( 2006-10-01), p. 7672-
Abstract:
A hypothesis on the atomic structure of silicon oxide is proposed to explain the discrepancy between theoretical and experimental studies on the oxygen diffusion and the interfacial reaction during the thermal silicon oxidation process. The hypothesis says that silicon oxide contains “oxygen traps”, in which the molecular oxygen can be located with almost 0 dissolving enthalpy. The density of the “traps” is ∼10 16 cm -3 . A possible local structure is also proposed based on the first-principles calculations.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.45.7672
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2006
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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