In:
ECS Transactions, The Electrochemical Society, Vol. 58, No. 8 ( 2013-08-31), p. 105-111
Kurzfassung:
We discuss the use of the alloy catalyst AgAu to grow silicon nanowires and Si/Ge heterojunctions. Nanoscale particles of the catalyst with compositions Ag:Au varying from 2:1 to 1:2 can be fabricated and used to form Si nanowires with high crystal quality, and SiGe interfaces that are close to atomically abrupt. In situ experiments in the TEM are essential for investigating the mechanisms of growth with these alloy catalysts. We describe the relationship between growth kinetics and catalyst state, as well as the environmental stability of the alloy catalysts.
Materialart:
Online-Ressource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05808.0105ecst
Sprache:
Unbekannt
Verlag:
The Electrochemical Society
Publikationsdatum:
2013
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