In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 4S ( 2013-04-01), p. 04CR12-
Abstract:
Thick heterojunction cells composed of fullerene and p-type hole-transporting materials (HTMs) doped with molybdenum oxide (MoO 3 ) were fabricated. The Fermi level ( E F ) of HTMs shifted toward the positive direction and close to the upper edge of the valence band following MoO 3 doping. These E F shifts indicate that intrinsic HTMs changed to be of the p-type. The introduction of p-type HTMs to the cells increased photocurrent density and fill factor. The increase in photocurrent density can be explained by the formation of built-in potential at the interface between p-type HTMs and C 60 . On the other hand, the increase in fill factor can be explained by the drastic decrease in the resistance of 300-nm-thick HTM films, which reached a very small value of 2 Ω.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.04CR12
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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