In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 2 ( 2011), p. 028101-
Abstract:
Ge0.975Sn0.025 alloy films have been grown on Si(001) substrates by molecular beam epitaxy with high-quality Ge films as buffer layers.The alloys have high crystalline quality without Sn surface segregation, determined by double crystal X-ray diffraction and Rutherford backscattering spectra measurement. In addition, the Ge0.975Sn0.025 alloy has rather good thermal stability at 500 ℃, which makes it possible to be used in Si-based optoelectronic devices.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.60.028101
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2011
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