In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 1118 ( 2015-7), p. 270-275
Abstract:
Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.1118
DOI:
10.4028/www.scientific.net/AMR.1118.270
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2015
detail.hit.zdb_id:
2265002-7
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