In:
Journal of Semiconductors, IOP Publishing, Vol. 42, No. 8 ( 2021-08-01), p. 082802-
Abstract:
Different switching frequencies are required when SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are switching in a space environment. In this study, the total ionizing dose (TID) responses of SiC power MOSFETs are investigated under different switching frequencies from 1 kHz to 10 MHz. A significant shift was observed in the threshold voltage as the frequency increased, which resulted in premature failure of the drain–source breakdown voltage and drain–source leakage current. The degradation is attributed to the high activation and low recovery rates of traps at high frequencies. The results of this study suggest that a targeted TID irradiation test evaluation method can be developed according to the actual switching frequency of SiC power MOSFETs.
Type of Medium:
Online Resource
ISSN:
1674-4926
,
2058-6140
DOI:
10.1088/1674-4926/42/8/082802
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
2484682-X
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