In:
ECS Transactions, The Electrochemical Society, Vol. 58, No. 9 ( 2013-08-31), p. 201-206
Abstract:
In germanium (Ge) MOSFET technology, surface planarization is a serious concern for mobility enhancement at high carrier density, reliability improvement of gate dielectrics and morphology control for non-planar FETs. In this work, (111)-oriented Ge substrates were annealed at 350-750 o C in pure H 2 atmosphere, and the surface structure and morphology were analyzed with atomic force microscopy. A step and terrace structure was observed on the surface after the H 2 annealing above 500 o C. The terrace width is controllable by the off-angle of the initial surface within 0.3 o at least. The roughness root mean square (RMS) at 100 x 100 nm on single terrace is ~0.05 nm which is almost our detection limit, which implies that the single terrace on H 2 annealed Ge (111) is atomically flat. Furthermore, even though the initial surface roughness RMS is intentionally increased up to 0.6 nm, atomically flat terrace structure could be obtained by the H 2 annealing.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05809.0201ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013
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