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  • Sugiyama, Munehiro  (6)
  • Unknown  (6)
  • 1
    Online Resource
    Online Resource
    Recent performance of the Photon Factory gratingcrystal monochromator station BL-1A in the soft X-ray region
    International Union of Crystallography (IUCr) ; 1998
    In:  Journal of Synchrotron Radiation Vol. 5, No. 3 ( 1998-05-01), p. 786-787
    Details
    In: Journal of Synchrotron Radiation, International Union of Crystallography (IUCr), Vol. 5, No. 3 ( 1998-05-01), p. 786-787
    Abstract: This paper describes the recent performance of the Photon Factory beamline 1A with InSb(111) crystals used as the diffracting elements of the grating/crystal monochromator for monochromatizing soft X-rays. Pt-coated collimating and focusing mirrors located upstream and downstream of the monochromator have recently been replaced with Ni-coated mirrors in order to remove absorption structures at the Pt M -edges from output spectra in the soft X-ray region. Output spectra without the absorption structures and with higher intensity in the range 2000–3400 eV were obtained by using the Ni-coated collimating and focusing mirrors.
    Type of Medium: Online Resource
    ISSN: 0909-0495
    URL: Article
    DOI: 10.1107/S090904959800048X
    Language: Unknown
    Publisher: International Union of Crystallography (IUCr)
    Publication Date: 1998
    detail.hit.zdb_id: 2021413-3
    SSG: 13
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Annealing Effects on (NH 4 ) 2 S x -Treated GaAs(001) and InP(001) Surfaces
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 12A ( 1995-12-01), p. L1588-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 12A ( 1995-12-01), p. L1588-
    Abstract: Chemical state changes and desorption properties of S atoms in (NH 4 ) 2 S x -treated GaAs(001) and InP(001) surfaces are studied using soft X-ray photoelectron spectroscopy (SXPES) and thermal desorption spectroscopy (TDS). It was revealed by SXPES that (NH 4 ) 2 S x -treated and deionized-water-rinsed GaAs(001) and InP(001) surfaces, after annealing at 400° C, are completely terminated by S-Ga and In-S bonds, respectively. Desorption peaks of S atoms are observed at 560° C for S/GaAs(001) and 460° C for S/InP(001) in TDS spectra. Desorption of V-elements, such as As and P atoms, is hindered by the S passivation.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.7567/JJAP.34.L1588
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 3
    Online Resource
    Online Resource
    GaSb(001) 4×2-In Surface Structure Studied by Core-Level Photoelectron Spectroscopy and X-Ray Standing-Wave Analysis
    IOP Publishing ; 2000
    In:  Japanese Journal of Applied Physics Vol. 39, No. 7S ( 2000-07-01), p. 4351-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 7S ( 2000-07-01), p. 4351-
    Abstract: The surface structure of GaSb(001) 4×2-In was investigated by core-level photoelectron spectroscopy (CLPES) using synchrotron radiation and X-ray standing-wave (XSW) analysis. From the CLPES measurement, we found that the 4×2 surface was mainly composed of single chemical bondings, which could be assigned to In–Sb bonding. This indicated that an In–Sb molecular layer terminated this 4×2 surface. In addition, the In atom position was analyzed by XSW using two different asymmetric (111) and (1-11) reflections. The coherent position values of 0.684 for (111) and 0.015 for (1-11) that were obtained indicated that the In atom position was higher than the top Sb atom position of Sb-double-layer. From these results, we propose a surface local bonding model for GaSb(001) 4×2-In, in which the Sb-double layer remains and In atoms terminate the surface.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.39.4351
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Annealing Effects on $\bf (NH_{4})_{2}S_{\ninmbi x}$-Treated GaAs(001) and InP(001) Surfaces
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. Part 2, No. 12A ( 1995-12-1), p. L1588-L1590
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. Part 2, No. 12A ( 1995-12-1), p. L1588-L1590
    Type of Medium: Online Resource
    ISSN: 0021-4922
    URL: Article
    DOI: 10.1143/JJAP.34.L1588
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 5
    Online Resource
    Online Resource
    Oxygen and Nitrogen Fluorescence EXAFS Measurements by Gas Scintillation Proportional Counters
    IOP Publishing ; 1993
    In:  Japanese Journal of Applied Physics Vol. 32, No. S2 ( 1993-01-01), p. 234-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. S2 ( 1993-01-01), p. 234-
    Abstract: An ultrahigh vacuum compatible and compact x-ray fluorescence detector of gas scintillation proportional counter type have been developed for measuring fluorescence yield EXAFS of ultralow- Z elements. Fluorescence yield EXAFS spectra were obtained above the N and 0 K -edges of Si 3 N 4 and Sio 2 films for the first time by using this newly developed detector.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.7567/JJAPS.32S2.234
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 6
    Online Resource
    Online Resource
    An ultrahigh-vacuum goniometer for in situ soft X-ray standing-wave analysis of semiconductor surfaces
    International Union of Crystallography (IUCr) ; 1998
    In:  Journal of Synchrotron Radiation Vol. 5, No. 3 ( 1998-05-01), p. 1029-1031
    Details
    In: Journal of Synchrotron Radiation, International Union of Crystallography (IUCr), Vol. 5, No. 3 ( 1998-05-01), p. 1029-1031
    Abstract: An ultrahigh-vacuum goniometer was developed for in situ X-ray standing-wave (XSW) analysis of semiconductor surfaces prepared by molecular-beam epitaxy (MBE). Although two ultrahigh-vacuum motors for χ and φ rotating axes are inside the analysis chamber, low-energy photoelectrons can still be collected as the magnetic field is sufficiently suppressed by using metal shields. Furthermore, the sample can be annealed at temperatures higher than 870 K on the goniometer in the analysis chamber. This goniometer is used at beamline 1A (BL-1A) at the Photon Factory, where both monochromated soft X-rays and UV radiation are available. This analysis system was shown to be suitable not only for in situ soft-XSW and X-ray absorption near-edge structure (XANES) studies but also for synchrotron radiation photoelectron spectroscopy (SRPES) studies. The annealing effects on an S-adsorbed GaAs(001) surface could be studied by SRPES, XANES and XSW using this new goniometer.
    Type of Medium: Online Resource
    ISSN: 0909-0495
    URL: Article
    DOI: 10.1107/S0909049597015549
    Language: Unknown
    Publisher: International Union of Crystallography (IUCr)
    Publication Date: 1998
    detail.hit.zdb_id: 2021413-3
    SSG: 13
    Location Call Number Limitation Availability
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    Online Resource
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