In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 11B ( 1999-11-01), p. L1306-
Abstract:
Bright and sharp photoluminescence was obtained from Eu-doped GaN films grown
by gas-source molecular beam epitaxy using ammonia. It was found that the decrease in luminescence intensity is small between 80 K and 300 K, compared with the red emission
from InGaN. The red emission from Eu-doped GaN also showed only a small peak shift within 1.6 meV in the same temperature range. From these results, the advantage of using
Eu-doped GaN as a stable optoelectronic material against temperature variation is shown.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L1306
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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