In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 2S ( 1999-02-01), p. 977-
Abstract:
100-mm-diameter 〈 100 〉 undoped InP single crystals were grown
by the vertical gradient freezing (VGF) method using a high-pressure furnace. In order to reduce the temperature fluctuation in the furnace
for preventing twinning during crystal growth, we investigated the gas flow in the furnace by a computer simulation. The simulation results
showed that the gas flow was quite unstable because of the collision between the gas and the hot-zone or other gas flows. After we
developed a hot-zone to control the gas flow, the temperature fluctuation near the seed crystal reduced from ±0.3°C to
±0.03°C. The axial temperature gradient was lower than 10°C/cm and the growth rate was higher than
0.4 mm/h. Twin-free 100-mm-diameter single crystals could be obtained for the first time under these conditions. The average EPD(Etch Pit
Density) of the grown crystals was about 2000 cm -2 , less than
that of the conventional 75-mm-diameter InP LEC (liquid encapsulated Czochralski) crystals.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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