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  • The Electrochemical Society  (14)
  • Liu, Yang  (14)
  • Unknown  (14)
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  • The Electrochemical Society  (14)
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  • Unknown  (14)
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  • 1
    In: ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 11, No. 3 ( 2022-03-01), p. 035010-
    Abstract: In this paper, in order to improve the driving ability of vertically-stacked gate-all-around (GAA) Si nanosheets (NSs) devices, a high-efficiency hybrid pattern technique with the SiNx spacer-image transfer (SIT) and conventional photolithography pattern was proposed and implemented to form size-enlarged landing pads (LPs) on nanscale fins at the same time, which increase the volumes of electrical conductance pathway between NS channels and source and drain (SD) electrodes with high process efficiency and compatibility with traditional mass production technology. Due to introduced new structures, the parasitic resistance of the devices is reduced by 99.8% compared with those of w./o. LPs. Therefore, ∼3 times and ∼2 times driving current enhancements for 500 nm gate length n -type and p -type MOSFETs are obtained, respectively. The results indicate the proposed GAA NS FET fabrication process with LPs by high-efficiency hybrid pattern technique a promising solution for improving the device driving ability for stacked GAA Si NSs devices in future.
    Type of Medium: Online Resource
    ISSN: 2162-8769 , 2162-8777
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2022
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  • 2
    In: ECS Transactions, The Electrochemical Society, Vol. 52, No. 1 ( 2013-03-08), p. 841-846
    Abstract: Recently we have demonstrated the thermal oxidized TiO 2 /Al 2 O 3 as gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOS-HEMTs) with enhanced breakdown voltage of 490 V compared with 60-100 V breakdown voltage for normal HEMTs. The characteristics of GaN-based MOS-HEMTs with TiO 2 /Al 2 O 3 gate dielectrics are measured and simulated using Sentaurus Device Software. The significant improvement of breakdown voltage of MOS-HEMTs with TiO 2 /Al 2 O 3 gate oxide was analyzed. It is shown that the effect of TiO 2 on surface electric potential distribution results in the improvement of breakdown voltage. This work will represent a solid basis for improvement of breakdown voltage and enhancement of the device reliability.
    Type of Medium: Online Resource
    ISSN: 1938-5862 , 1938-6737
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2013
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  • 3
    Online Resource
    Online Resource
    The Electrochemical Society ; 2018
    In:  ECS Meeting Abstracts Vol. MA2018-02, No. 5 ( 2018-07-23), p. 386-386
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2018-02, No. 5 ( 2018-07-23), p. 386-386
    Abstract: Sodium iron hexacyanoferrate (Fe-HCF) is regarded as a potential cathode material for sodium-ion batteries (SIBs) due to its high specific capacity, low cost, facile synthesis and environmentally friendly. However, Fe-HCF always suffers from poor electronic conductivity, low crystallinity and side reactions with electrolyte, leading to poor rate performance, low coulombic efficiency and deterioration of cycling stability. Herein, we report the green and facile synthesis to encapsulate Fe-HCF microcubes with potassium nickel hexacyanoferrate (Ni-HCF) and PPy, separately, the surface modified Fe-HCF can exhibit excellent electrochemical performance as cathode in SIBs (Fig. 1). Firstly, the Fe-HCF@PPy composite exhibits a discharge capacity of 113.0 mA h g -1 at a current density of 25 mA g -1 and 75 mA h g -1 at 3000 mA g -1 . Greatly improved cycling stability is attained with 79% capacity retention over 500 cycles at 200 mA g -1 . The superior rate capability and excellent cyclability can be ascribed to the effects from PPy as both electronic conductor to enhance the conductivity and protective layer to prevent the side reactions. Secondly, the core-shell Fe-HCF@Ni-HCF composite delivers a reversible capacity of 79.7 mAh g -1 at 200 mA g -1 after 800 cycles and a high coulombic efficiency of 99.3 %. In addition, Fe-HCF@Ni-HCF exhibits excellent rate performance, retaining 60 mAh g -1 at 2000 mA g -1 . The results show that Fe-HCF@Ni-HCF integrates the advantages of both Fe-HCF and Ni-HCF, making it electrochemically stable as cathode material for SIBs. Figure 1
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2018
    detail.hit.zdb_id: 2438749-6
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  • 4
    Online Resource
    Online Resource
    The Electrochemical Society ; 2023
    In:  ECS Journal of Solid State Science and Technology Vol. 12, No. 6 ( 2023-06-01), p. 064003-
    In: ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 12, No. 6 ( 2023-06-01), p. 064003-
    Abstract: Silicon nanopore arrays (SiNPs) were prepared by a two-step inductively coupled plasma (ICP) etching process using a self-assembled anodic aluminum oxide film mask. The influence of etching parameters (first-step etching time, Cl 2 proportion in the etching gas, etching pressure, ICP power, and radio frequency (RF) power) on the morphology of the SiNPs were systematically investigated. The results revealed that the first step of ICP etching can effectively remove the barrier layer of the mask. Higher Cl 2 proportion and lower etching pressure increase the chemical corrosion and physical bombardment of ICP etching, respectively, which may damage the porous morphology. ICP power affects both chemical reaction etching and physical bombardment, but the RF power mainly affects physical etching. The etching rate is positively correlated with Cl 2 proportion and RF power, and negatively correlated with etching pressure. The optimized first-step etching time, Cl 2 /Ar ratio, etching pressure, ICP power and RF power for high-quality SiNPs are approximately 10 s, 60%, 7 mTorr, 900 W and 100 W, respectively. Precise control of the pore size and depth of the SiNPs can be achieved using this controllable growth process. These results demonstrate a simple and controllable way to achieve good quality SiNPs with desired sizes.
    Type of Medium: Online Resource
    ISSN: 2162-8769 , 2162-8777
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2023
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  • 5
    Online Resource
    Online Resource
    The Electrochemical Society ; 2021
    In:  ECS Meeting Abstracts Vol. MA2021-02, No. 34 ( 2021-10-19), p. 994-994
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2021-02, No. 34 ( 2021-10-19), p. 994-994
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2021
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  • 6
    Online Resource
    Online Resource
    The Electrochemical Society ; 2018
    In:  ECS Meeting Abstracts Vol. MA2018-02, No. 33 ( 2018-07-23), p. 1114-1114
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2018-02, No. 33 ( 2018-07-23), p. 1114-1114
    Abstract: With the rapid development of electronic industry, the packaging technology requires higher density and integration, which is a great challenge for semiconductor manufacturing. In order to continue the acknowledged “Moore's law”, the three-dimensional through silicon via (TSV) packaging of stacked chips has become the focus of attention, providing fresh ideas for the industry. The preparation of insulators is one of the key technologies for TSV. However it is difficult for conventional methods to prepare SiO 2 insulators with high coverage in TSV with small size and high aspect ratio. In addition, higher performance of TSV proposes a big challenge for SiO 2 . Organic polymers can replace SiO 2 used as an insulator for TSV, because their lower dielectric constant can greatly improve the properties of TSV. Electrografting is a novel technology for polymer film preparation, which has the advantages of being simple, low cost and does not required special equipment.. In recent years, the modification of the Si surface with the electrochemical reduction of diazonium salts has become attractive because it can be performed in aqueous media, which is more acceptable for industrial applications. In the best understood reaction, a diazonium salt with an electrolyte such as tetrabutylammonium cations is reduced by an externally applied potential, typically at around −1 V versus the saturated calomel electrode. In our study, the electrografting technology is used to graft polymer film onto a Si surface, and its mechanism and the effects of pulsed voltage and composition of the solution are investigated. In the process of electrografting, 4-nitrobenzene diazonium (NBD) tetrafluoroborate is reduced by electrons provided by an electric source, forming nitrophenyl radicals. These radicals covalently bond to the Si surface to form a polynitrophenyl (PNP) primer layer, and initiate the polymerization of vinyl monomers. The radical-terminated polyvinyl chains formed in the solution and nitrophenyl radicals are then added to the aromatic rings of the primer layer to form the expected polyvinyl film. Consequently the grafted film is composed of PNP and the polymer of monomers. Furthermore, we propose an easier chemical grafting method based on the finding that diazonium salt can be spontaneously reduced at the Si surface when HF is present in the aqueous solution even without an externally applied potential., and study the influence factors of structure, morphology and component of the polymer film. This process is conducted in acidic aqueous media containing HF. From the mechanistic point of view, Si atoms at the Si surface are oxidized by HF, providing electrons for the reduction of NBD cations at the open circuit potential. The mechanism of the grafting of the polymer of monomers is the same as that of an electrografting process. The polymer films prepared by either the electrografting or chemical grafting methods have good adhesion, dielectric properties and thermal properties. Then the polymer film is applied in TSV. As far as we know, insufficient film thickness and low coverage are still serious problems for plasma-enhanced chemical vapor deposition methods. However, both electrografting and chemical grafting overcome these problems. In addition, the narrow diameter and high aspect ratio (≥1:10) are not limitations for grafting methods. Poly(methyl methacrylate) film has a coverage of 76%, while poly(acrylic acid) film has a coverage as high as 100%.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2018
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  • 7
    Online Resource
    Online Resource
    The Electrochemical Society ; 2021
    In:  Journal of The Electrochemical Society Vol. 168, No. 9 ( 2021-09-01), p. 090531-
    In: Journal of The Electrochemical Society, The Electrochemical Society, Vol. 168, No. 9 ( 2021-09-01), p. 090531-
    Abstract: The addition of tetrabasic lead sulfates (4BS) as additives to positive pastes will effectively address the shortcomings which occur during the usage of Lead-acid batteries, such as the premature capacity loss and the active substances shed in the positive paste. We synthesized 4BS seeds using the doped lead sulfate atmospheric hydrothermal method with the lead oxide, lead sulfate, and sulfuric acid as reactant. The purity and yield of 4BS reach above 99% and 92.5%, respectively, and the particle size was approximately 10 μ m. The products have been characterized by scanning electron microscope and X-ray diffractometer. Composition analysis and processing method exploration of the effluent from the 4BS synthesis were finished as well.
    Type of Medium: Online Resource
    ISSN: 0013-4651 , 1945-7111
    RVK:
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2021
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  • 8
    Online Resource
    Online Resource
    The Electrochemical Society ; 2020
    In:  ECS Journal of Solid State Science and Technology Vol. 9, No. 4 ( 2020-01-05), p. 045016-
    In: ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 9, No. 4 ( 2020-01-05), p. 045016-
    Abstract: Beta-(Al x Ga 1−x ) 2 O 3 thin films were prepared on c-plane sapphire substrates by low-pressure reactive vapor deposition at different temperature. The crystal structure, surface morphology, and optical properties of β -(Al x Ga 1−x ) 2 O 3 films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), and transmission spectra. The β -(Al x Ga 1−x ) 2 O 3 films were preferred [ 2 ¯ 01] orientation. The film grown at 1400 °C has narrower full width half maximum (FWHM) than grown at 1450 °C. As the growth temperature increases, the Al group decreases. The Al content of β -(Al x Ga 1−x ) 2 O 3 films grown at 1400 °C and 1450 °C are x = 0.524 and x = 0.489, respectively. The SEM and AFM images showed different growth mode for β -(Al x Ga 1−x ) 2 O 3 films grown at 1400 °C and 1450 °C and their root-mean-square roughness (RMS) values are 5.27 nm and 5.33 nm, respectively. All the prepared β -(Al x Ga 1−x ) 2 O 3 films have high transmittances exceeding 90% in visible region and large optical bandgap above 6 eV. These results indicate that low-pressure reactive vapor deposition technology is a promising growth technology for a high quality β -(AlGa) 2 O 3 films with tunable properties.
    Type of Medium: Online Resource
    ISSN: 2162-8769 , 2162-8777
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2020
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  • 9
    Online Resource
    Online Resource
    The Electrochemical Society ; 2013
    In:  ECS Meeting Abstracts Vol. MA2013-02, No. 2 ( 2013-10-27), p. 42-42
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2013-02, No. 2 ( 2013-10-27), p. 42-42
    Abstract: Abstract not Available.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2013
    detail.hit.zdb_id: 2438749-6
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  • 10
    Online Resource
    Online Resource
    The Electrochemical Society ; 2012
    In:  ECS Meeting Abstracts Vol. MA2012-01, No. 5 ( 2012-02-15), p. 107-107
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2012-01, No. 5 ( 2012-02-15), p. 107-107
    Abstract: Abstract not Available.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2012
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