In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 2S ( 2012-02-01), p. 02BC12-
Abstract:
The hot-carrier stress effects on the high-frequency performance characteristics of laterally diffused metal–oxide–semiconductor (LDMOS) transistors were investigated. A constant bias channel hot-carrier stress was applied at room temperature. After applying 3 h of hot-carrier stress, the on-resistance and saturation drain current degradations are 18 and 9%, respectively. However, the degradations of the cutoff frequency and maximum oscillation frequency were less than 2% when the devices were biased before the onset of quasi-saturation. In addition, we found that the degradations of high-frequency parameters are not related to the change in transconductance but to the changes in gate capacitances. Finally, S -parameter variations under hot-carrier stress were also examined in this study. The observations of S -parameter variations are important for RF power amplifier design.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.02BC12
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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