In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 449-452 ( 2004-3), p. 497-500
Abstract:
ZrO 2 /Al 2 O 3 bilayer structure was investigated as one of potential replacements for SiO 2 gate dielectric. Al 2 O 3 and ZrO 2 films were also examined and showed stoichiometric characteristics with negligible chlorine and carbon impurities. Al 2 O 3 film exhibited an amorphous structure without interlayer formation while ZrO 2 film showed a randomly
oriented polycrystalline structure with amorphous phase of interlayer. ZrO 2 /Al 2 O 3 bilayer film exhibited no interfacial layer between Si substrate and Al 2 O 3 layers. The flat band voltage and hysteresis of ZrO 2 /Al 2 O 3 bilayer film were 0.8 V and 150 mV, respectively, with fully reversible hysteresis. The measured leakage current of ZrO 2 /Al 2 O 3 bilayer film was 1.2E-6 A/cm2 with EOT value of 1.4 nm. ZrO2/Al2O3 bilayer film showed significantly enhanced gate oxide properties compared to those of the individual Al 2 O 3 and ZrO 2 films.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.449-452
DOI:
10.4028/www.scientific.net/MSF.449-452.497
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2004
detail.hit.zdb_id:
2047372-2
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