In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4S ( 2000-04-01), p. 2030-
Abstract:
For n-channel metal-oxide semiconductor field effect transistor(MOSFET) devices with thin
gate oxide, the effects of low temperature hydrogen and deuterium annealing on plasma process-induced damages are examined. The test
devices were first exposed to the plasma during poly-Si gate or metal processes, and then the device characteristics were measured
with the charge pumping method. It was observed that the metal process induced more interface traps than the poly-Si gate
process. D 2 annealing was more effective in curing the
interface damages than H 2 annealing, and the strength to
resist ac electrical stress was enhanced significantly after D 2 annealing. The stability of interface properties was
increased with the annealing temperature and time. It is concluded that the latent damages, which appear after electrical stress,
originate from the plasma process-induced damages that were unintentionally passivated by hydrogen atoms during subsequent
processes.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2030
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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