In:
ECS Transactions, The Electrochemical Society, Vol. 3, No. 8 ( 2006-10-20), p. 293-300
Abstract:
Five-stage ring oscillators (ROs) composed of amorphous In-Ga- Zn-O (a-IGZO) channel TFTs were fabricated at room temperature with no post-deposition annealing. We observed oscillation of ROs with a variety of channel lengths and channel widths. A RO with channel lengths of 10 um operated at 21.5 kHz (propagation delay of 4.7 us / stage), when the external voltage of +18 V was supplied. A circuit simulation reproduced the measured output characteristics of ROs qualitatively, and also the simulated propagation delays agreed with the measured ones approximately.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2006
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