In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 5R ( 2011-05-01), p. 056101-
Abstract:
On a plasma etch reactor for a wafer of 300 mm in diameter, the spatial distributions of the absolute densities of CF and CF 2 radicals, electron density ( n e ), and the gas temperature ( T g ) of N 2 were measured employing the dual frequency of negative dc voltage superposed to a very high frequency (VHF) of 60 MHz capacitively coupled plasma (DS-2f-CCP) with the cyclic- (c-)C 4 F 8 /Ar/N 2 gas mixture. The dc bias was superposed on the upper electrode with a frequency of 60 MHz. The distributions of electron and radical densities were uniform within a diameter of about 260 mm, and took a monotonic decay in regions outside a diameter of 260 mm on the reactor for 300 mm wafers in the reactor. It was found that only CF 2 density at the radial position between 150 and 180 mm, corresponding to the position of the Si focus ring, dropped, while CF density took a uniform distribution over a diameter of 260 mm. Additionally, at this position, the rotational temperature of N 2 gas increased to be 100 K larger than that at the center position. CF 2 radical density was markedly affected by the modified surface loss probability of the material owing to coupling with surface temperature.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.056101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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