In:
Key Engineering Materials, Trans Tech Publications, Ltd., Vol. 421-422 ( 2009-12), p. 201-204
Abstract:
The relationship between the defect structure and luminescence property of ZnO ceramics implanted with Ar of 2×1015 – 60×1015 ions/cm2 was studied. After annealing, the heavy dose-implanted sample (Ar ≥ 30×1015 ions/cm2) was characterized by a luminescence peak at the 730-nm wavelength. Defects in the implanted region formed voids during post-annealing. Oxygen tracer experiments indicated that grain boundary diffusion in the implanted region was enhanced significantly.
Type of Medium:
Online Resource
ISSN:
1662-9795
DOI:
10.4028/www.scientific.net/KEM.421-422
DOI:
10.4028/www.scientific.net/KEM.421-422.201
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2009
detail.hit.zdb_id:
2073306-9
Permalink