In:
Journal of Semiconductors, IOP Publishing, Vol. 41, No. 12 ( 2020-12-01), p. 122801-
Abstract:
In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I – V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.
Type of Medium:
Online Resource
ISSN:
1674-4926
,
2058-6140
DOI:
10.1088/1674-4926/41/12/122801
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
2484682-X
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