In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 9S ( 1995-09-01), p. 5178-
Abstract:
SrTiO 3 thin films are deposited on Pt/SiO 2 /Si substrates using RF magnetron sputtering in a temperature range from 200° C to 600° C. The film deposited at 600° C shows the best dielectric property and leakage current characteristics due to its good crystallinity and stoichiometric composition. Dielectric constant of the film deposited at 600° C decreases with decreasing thickness from 235 at 120 nm to 145 at 30 nm. Leakage current shows a constant value of about 30 nA/cm 2 at 1.6 V in a thickness range from 50 nm to 120 nm but increases rapidly to 5 µ A/cm 2 at 30 nm. The electrical properties of the films are explained by a model of the Pt/SrTiO 3 /Pt capacitor based on the band structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.5178
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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