In:
ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2019-01, No. 26 ( 2019-05-01), p. 1264-1264
Abstract:
In the past few decades, wide-bandgap SiC (3.3 eV) and GaN (3.4 eV) based semiconductor rectifiers have shown promising results in power electronic switching and control applications. [1] Recently, Ga 2 O 3 has attracted significant interest for its outstanding potential in power electronics due to superior material properties and availability of high-quality substrate and n-type epistructures. [2,3] The energy band gap of Ga 2 O 3 is in the range of 4.5 – 4.9 eV, which corresponds to a ~8 MV/cm theoretical breakdown electric field. Reverse breakdown voltages larger than 1 kV were reported for both unterminated Ga 2 O 3 vertical rectifiers (1000 V and 1600 V) and field-plated Ga 2 O 3 Schottky diode (1076 V and 2300 V) with an epi thickness of 8 µm and 20 µm, respectively. [4,5,6,7] Furthermore, the switching characteristics of Ga 2 O 3 vertical Schottky diodes were also investigated, and the recovery time was in the range of 20 to 30 ns. [6,7] This indicates an impressive potential application for high power switching devices. In this study, field-plate edge-termination was utilized on a lightly doped 20 µm Ga 2 O 3 epitaxial layer to greatly improve the Ga 2 O 3 vertical rectifier breakdown voltage. In addition, we demonstrate that an 8 µm epitaxial layer of β-Ga 2 O 3 on bulk conducting substrates can achieve forward currents in the 1 A range with a reverse breakdown voltage of 760 V. Field-plated edge-terminated (FPET) Schottky diodes with a reverse breakdown voltage of 2100 V (0.1 cm × 0.1 cm) and an absolute forward current of 1 A with 760 V of breakdown voltage (Diameter = 0.1 cm) were achieved on 20 and 8 µm epi-Ga 2 O 3 , respectively. The recovery characteristics for Ga 2 O 3 FPET Schottky diode switching from forward current of 1 A and 0.3 A to reverse off-state voltage of -300 V and -900 V with recovery time (t rr ) of 60 ns and 81 ns were demonstrated on diodes with drift layers thickness of 8 µm and 20 µm with 4.4 × 10 15 cm -3 and 2.0 x 10 15 cm -3 Si-doped epi-Ga 2 O 3 layer, respectively. There was no significant temperature dependence of t rr up to 150°C. These results are an important milestone towards the applications of Ga 2 O 3 vertical Schottky rectifiers in high power device and high-speed switching technologies. References [1] J. Millán, P. Godignon, X. Perpiñà, A. Pérez-Tomás and J. Rebollo, “A Survey of Wide Bandgap Power Semiconductor Devices” IEEE Trans Power Electr., vol. 29, no. 5, 2014 [2] S.I. Stepanov, V.I. Nikolaev, V. E. Bougrov and A.E. Romanov, “Gallium Oxide: Properties and Applications - a Review,” Rev. Adv. Mater. Sci ., vol. 44, no. 63, pp. 63-86, 2016 [3] S. J. Pearton, J. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, “A review of Ga 2 O 3 materials, processing, and devices,” Appl.Phys. Rev ., vol. 5, no. 011301, 2018 [4] J. Yang, S. Ahn, F. Ren, S.J. Pearton, S. Jang, and A. Kuramata, “High Breakdown Voltage (-201) β-Ga 2 O 3 Schottky Rectifiers,” IEEE EDL , vol. 38, no. 7, 2017 [5] K. Konishi, K. Goto, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “1-kV Vertical Ga 2 O 3 field-plated Schottky barrier diodes,” Appl. Phys. Lett , vol. 110, no. 103506, 2017 [6] J. Yang, S. Ahn, F. Ren, S.J. Pearton, S. Jang, J. Kim and A. Kuramata, “High reverse breakdown voltage Schottky rectifiers without edge termination on Ga 2 O 3 ,” Appl. Phys. Lett, vol. 110, no. 192101, 2017 [7] J. Yang, F. Ren, M. Tadjer, S.J. Pearton, and A. Kuramata, “2300 V Reverse Breakdown Voltage Ga 2 O 3 Schottky Rectifiers,” ECS J. Solid State Sci. Technol, vol. 7: P92, 2017
Type of Medium:
Online Resource
ISSN:
2151-2043
DOI:
10.1149/MA2019-01/26/1264
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2019
detail.hit.zdb_id:
2438749-6
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