In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 2S ( 2014-02-01), p. 02BC15-
Abstract:
Current-perpendicular-to-plane (CPP) junctions of Fe 3 Si/FeSi 2 were fabricated from Fe 3 Si/FeSi 2 artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe 3 Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. The critical current density for it is approximately 3.3 × 10 1 A/cm 2 , which is at least four orders smaller than the values that have ever been reported.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.02BC15
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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