In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 9A ( 1989-09-01), p. L1641-
Abstract:
InN films are epitaxially grown on GaAs substrates at 450°C by a rf-excited reactive evaporation method. The epitaxial relationship of (0001)InN//(111)GaAs is confirmed from transmission electron diffraction and X-ray diffraction measurements. The value of a full width at half-maximum of the double-crystal X-ray rocking curve for the (0002) diffraction is 17s. Surface morphologies of the InN films are also investigated by scanning electron microscopy.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.28.L1641
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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