In:
ECS Transactions, The Electrochemical Society, Vol. 18, No. 1 ( 2009-03-06), p. 895-900
Abstract:
Pentacene organic field effect transistors with a series of sub-micrometer channel have been fabricated and characterized. Source and drain metal electrodes was made by electron-beam lithography and lift-off process. Image reversal photo resist was used to make integrated mask to pattern the organic semiconductor film to reduce the off-state current. And thiol treatment was applied on gold electrodes to modify their surface energy and improve the charge carrier injection. All the devices can behavior as typical p-type transistor, and have obvious saturation. Using electrode and dielectric surface treatment, device performances have significant improvement. All of the performances, including mobility, threshold voltage and on/off current ratio will change with the channel length decreasing because of the low quality interface between the OSC and dielectrics.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2009
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