In:
Chinese Journal of Chemical Physics, AIP Publishing, Vol. 33, No. 6 ( 2020-12-01), p. 733-742
Abstract:
In this study, we have developed a high-sensitivity, near-infrared photodetector based on PdSe2/GaAs heterojunction, which was made by transferring a multilayered PdSe2 film onto a planar GaAs. The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination, indicating that the near-infrared photodetector can be used as a self-driven device without external power supply. Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×105 measured at 808 nm under zero bias voltage. The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×1011 Jones, respectively. Moreover, the device showed excellent stability and reliable repeatability. After 2 months, the photoelectric characteristics of the near-infrared photodetector hardly degrade in air, attributable to the good stability of the PdSe2. Finally, the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
Type of Medium:
Online Resource
ISSN:
1674-0068
,
2327-2244
DOI:
10.1063/1674-0068/cjcp2005066
Language:
English
Publisher:
AIP Publishing
Publication Date:
2020
detail.hit.zdb_id:
1106530-8
detail.hit.zdb_id:
2381472-X
SSG:
6,25
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